DMN33D8LDW-13 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Diodes

Model:

DMN33D8LDW-13

Description:

MOSFET 2N-CH 30V 0.25A

Stock:

8149

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.01

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

250mA

Drain source voltage (Vdss)

30V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

1.23nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

48pF @ 5V

On resistance (maximum) for different Ids and Vgs

2.4 Ω @ 250mA,10V

Power - maximum

350mW

Vgs (th) (maximum) for different Ids

1.5V @ 100µA

packing

series

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

DMN33D8LDW-13（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8149,Price reference "real-time change" China/Hongkong。 DMN33D8LDW-13 package/specs, Download DMN33D8LDW-13、Datasheet。